we use diamond as a semiconductor About advent diamond

Advent Diamond wants you to help us change what's possible in the world of electronics. We are making semiconductor devices using lab-grown diamond. As a start-up company, we seek a team player who enjoys learning, growing and adapting to changing opportunities. Our company values making technology that benefits society and maintaining a positive workplace culture.

  • 20


  • $10 MIL


  • 2010


  • $750K


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whom we serve

  • 1 Radiation sensors for Research and Medical application
  • 2 Telecommunication and RF systems
  • 3 Power systems and Electrification (drones & aircrafts
  • 4 Quantum sensors and computers

awarded $750K to commercialize diamond electronics

Advent Diamond has been awarded Small Business Innovation Research (SBIR) Phase II grant for $750K to conduct research and development work on advancing single-crystal diamond high power diodes capable of operating at high temperature.

The possibility of laser induced variation of optical and electrical properties of conductive nanocrystalline diamond (CNCD) films has been demonstrated. The films were produced by microwave plasma chemical vapor deposition (MPCVD) from CH4:H2:N2 gas mixtures. The films were irradiated in air with 20 ns pulses of an ArF excimer laser (λ = 193 nm). It was found that low laser pulse intensity (~0.05 J/cm2), well below film surface graphitization (~0.3 J/cm2) and nanoablation (~0.08 J/cm2) thresholds, induces changes of the film properties. The effect requires multiple pulsed irradiation and results in a decrease of the film electrical conductivity, which is accompanied by optical bleaching of the diamond film absorption.

Diamond PIN diodes with an approximately 5-𝜇m thick i-layer and coated with a thin boron nitride (BN) layer have been tested with a thermal neutron beam. For a flux of 4.4 °¡ 106 n/s/cm2, count rates were on the order of 30–100 counts per second depending on the thickness of the BN neutron converter layer. Pulse height spectra showed features associated with 𝛼 and 7Li fission products consistent with the thickness of the BN layer. An irradiation test with a 1 MeV neutron equivalent fluence of 1015 n/cm2 showed no significant alteration in the count rate of the tested detector.