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Diamond has long been cherished as a gemstone and symbol of endurance. It is famous for being able to cut through almost anything. Now, diamond is cutting through barriers and making headlines as a semiconductor.
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In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm 2.
One of the most promising materials for next-generation power components, diamond has promise for emerging new applications, such as ultra-fast electric vehicle charging stations, co-location with motors in high temperature environments, and solid-state transformers
Electron emitters are widely deployed in traveling wavetubes (TWTs) for communications, radar applications, and scientific apparatus like free electron lasers.
May, 2020 Local startup awarded $750K to commercialize diamond electronics
Advent Diamond has been awarded Small Business Innovation Research (SBIR) Phase II grant for $750K to conduct research and development work on advancing single-crystal diamond high power diodes capable of operating at high temperature.
February, 2020 Performance of 5-𝜇mPIN diamond diodes as thermal neutron detectors
Diamond PIN diodes with an approximately 5-𝜇m thick i-layer and coated with a thin boron nitride (BN) layer have been tested with a thermal neutron beam. For a flux of 4.4 °¡ 106 n/s/cm2, count rates were on the order of 30–100 counts per second depending on the thickness of the BN neutron converter layer. Pulse height spectra showed features associated with 𝛼 and 7Li fission products consistent with the thickness of the BN layer. An irradiation test with a 1 MeV neutron equivalent fluence of 1015 n/cm2 showed no significant alteration in the count rate of the tested detector.
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