BalancedEtch™
A proprietary process which reduces surface defects by 1000x.
A proprietary process which reduces surface defects by 1000x.
Our surface engineering suite includes catCMP™ for achieving sub-nanometer surface roughness and SeamlessDiamond™ for high quality diamond epilayer growth.
We grow doped-as-grown p-type, intrinsic, and n-type diamond epitaxial layers, leveraging precise calibration of dopant density and layer thickness to optimize performance for our microelectronic architectures.
Diamond compatible patterning processes using silicon foundry compatible tools for scalable production on scalable diamond wafer sizes.
Our proprietary diamond-specific etch recipes create sub-micron features necessary for advanced all-diamond components such as on-wafer integrated circuits and components.
Our proprietary diamond metallization is engineered to optimize all-diamond component performance and power metrics.
Built for extreme power and high frequency.
Our diamond RF components operate at temperatures 2–3x higher than state-of-the-art alternatives, enabling higher power density and smaller systems.
Engineered for exceptional power and high-frequency performance.
Operating Frequency:
S, C, X and higher frequency bands
Maximum Input:
10s W, 100s W and higher
Turn on voltage:
as low as 1.2V
We offer engineered products featuring all-diamond discrete RF diodes and all-diamond receiver protect solutions. Contact us for detailed data sheets or to discuss custom designs tailored to your needs.
Compact, efficient power for weight‑critical missions.
Diamond power components deliver 3–4× higher output power. Operating at temperatures up to 500 °C, they reduce weight and improve efficiency by simplifying bulky cooling systems in weight-critical applications.
Operating Temperature:
up to 500 °C
Power Handling:
3-4x higher as compared to SiC
Turn on voltage:
as low as 1.2V
Contact us to explore custom designs tailored to your requirements.
Powerful sensing with solid-state integration.
Our patent-pending quantum sensor uses PQuantumDiamond™ to deliver compact, solid-state environmental sensing with electric readout.
Our quantum materials portfolio includes surface engineering for ultra-smooth low-defect surfaces and growth of PQuantumDiamond™ films for high-performance sensing.
Our patent-pending magnetic field sensor, based on PQuantumDiamond™ material swaps optical readout for integrated solid-state technology to enable stable, sensitive sensing in a compact package.
Contact us for the data sheets or to explore custom designs tailored to your requirements.
From security to medical use, diamond sensors excel in tough environments.
Diamond’s solar-blind operation, radiation and high-temperature resilience, and low noise make it an exceptional sensor material. Our proprietary U.S.-manufactured doped diamond structures are engineered for specialized detection needs.
The Detector Module and Readout Electronics form the ClearXCam™ 2304 – a compact and easy-to-use in-beam imaging system. This system is effective for X-ray beamline scientists across various use cases: discovery of in-beam features, position monitoring, simplifying focusing events, and more.
We provide diamond sensors in a variety of designs, including diode configurations for low-voltage applications, and proprietary sturdy metallization options for harsh environments.
Explore our diamond sensor catalog to view the full range of detectors. Contact us for more details or to discuss customized solutions tailored to your needs.
We implement proprietary surface treatments to remove subsurface polishing damage and prepare diamond surfaces for high quality epiready diamond deposition for high performing diamond components.
Diamond compatible etch process to remove subsurface polishing damage.
Orientation:
(1 0 0), (1 1 1) or polycrystalline
Surface Roughness:
comparable or less than the starting surface
Defect Reduction:
up to 103 cm-3
Contact us to share your requirements and explore collaborative opportunities.
Diamond compatible chemical mechanical polishing achieves atomic roughness to make the diamond wafer surface ready for Epilayers.
Diamond Wafer size:
up to 2″
Orientation:
(1 0 0) and polycrystalline
Surface Roughness:
<0.5 nm
Contact us to share your requirements and explore collaborative opportunities.
n-type (P doped) and intrinsic diamond epilayers with controlled doping concentration and thickness.
Growth method:
Plasma Enhanced Chemical Vapor Deposition (PECVD)
Crystal Orientation:
(1 0 0) and (1 1 1) oriented diamond wafers.
Intrinsic Diamond:
50 nm – 10 µm, N impurities <1015 [N]/cm3
n-type (P doped) Diamond:
50 nm – 500 nm, doping concentration 1016 to 1020 [P]/cm3,
Contact us to share your requirements and explore collaborative opportunities.